Early Stages of Oxygen Precipitation in Silicon: Proceedings of the NATO Advanced Research Workshop, Exeter, U.K., March 26-29 1996 (NATO Asi Series. Partnership Sub-Series 3. High Technology) (Gebundene Ausgabe)
von R. Jones


 
Synopsis:
Important findings are emerging from the careful monitoring of the changes in IR lattice absorption spectra over long time periods, observation of the growth of new bands that are correlated with electronic IR data, and high resolution ENDOR studies. Better samples are also becoming available for study, and great advances have been made in modelling techniques. The emphasis of the present book is on the fundamental issues of oxygen diffusion, the properties of small oxygen aggregates, and the effects of H, N, and C on oxygen precipitation. This text presents the proceedings of the confernece, discussing recent results on the vibrational spectroscopy of thermal donors, the enhanced diffusion of oxygen dimers, magnetic resonance, theoretical modelling, and the influence of H on oxygen diffusion.





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